The FDC6506P is a N-Channel MOSFET with a continuous drain current rating of 1.8A and a drain to source breakdown voltage of -30V. It has a drain to source resistance of 170mR and a power dissipation of 960mW. The device is packaged in bulk and is compliant with lead-free requirements. The FDC6506P is suitable for use in a variety of applications where a high current and low resistance are required. The device is rated for operation over a temperature range of -40°C to 150°C.
Current Rating-1.8A
Power960mW
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Technical Specifications
Rochester Electronics FDC6506P technical specifications.
General
| Continuous Drain Current (ID) | 1.8A |
| Current Rating | -1.8A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 190pF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 960mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDC6506P Datasheet
Download the complete datasheet for Rochester Electronics FDC6506P to view detailed technical specifications.
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