Rochester Electronics
FDC655BN
Transistor MOSFET N Channel 30 Volt 6.3 .6 Amp 6 Pin Supersot Tape and Reel
Current Rating6.3A
Power1.6W
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Technical Specifications
Rochester Electronics FDC655BN technical specifications.
General
| Continuous Drain Current (ID) | 6.3A |
| Current Rating | 6.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 570pF |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Power Dissipation | 1.6W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDC655BN Datasheet
Download the complete datasheet for Rochester Electronics FDC655BN to view detailed technical specifications.
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