The FDD3680 is a 100V power MOSFET with a continuous drain current of 25A. It features a drain to source breakdown voltage of 100V and a drain to source resistance of 32 milliohms. The device is packaged in a TO-252 case and is available in tape and reel packaging. It is lead free and suitable for high power applications. The FDD3680 can dissipate up to 60W of power and has an input capacitance of 1.73 nanofarads. It can operate at a gate to source voltage of up to 20V.
PackageTO-252
Current Rating25A
Power60W
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Technical Specifications
Rochester Electronics FDD3680 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 25A |
| Current Rating | 25A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.73nF |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 60W |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDD3680 Datasheet
Download the complete datasheet for Rochester Electronics FDD3680 to view detailed technical specifications.
No datasheet is available for this part.