The FDD8782 is a TO-252 packaged N-channel MOSFET with a continuous drain current rating of 35A and a drain to source breakdown voltage of 25V. It has a power dissipation of 50W and a DC rated voltage of 25V. The device is lead free and packaged in cut tape. The input capacitance is 1.22nF and the gate to source voltage is 20V.
PackageTO-252
Current Rating35A
Power50W
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Technical Specifications
Rochester Electronics FDD8782 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 35A |
| Current Rating | 35A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 25V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.22nF |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Power Dissipation | 50W |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDD8782 Datasheet
Download the complete datasheet for Rochester Electronics FDD8782 to view detailed technical specifications.
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