Rochester Electronics
FDFS6N754
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V , 4A, 56mΩ
PackageSOIC
Current Rating4A
Power2W
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Technical Specifications
Rochester Electronics FDFS6N754 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 4A |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 299pF |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDFS6N754 Datasheet
Download the complete datasheet for Rochester Electronics FDFS6N754 to view detailed technical specifications.
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