The FDG311N is a 20V N-Channel MOSFET with a continuous drain current rating of 1.9A and a drain to source resistance of 115mR. It has a power dissipation of 750mW and is packaged in a lead free bulk package. The device is rated for operation at a DC voltage of 20V.
Current Rating1.9A
Power750mW
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Technical Specifications
Rochester Electronics FDG311N technical specifications.
General
| Continuous Drain Current (ID) | 1.9A |
| Current Rating | 1.9A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 270pF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 750mW |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDG311N Datasheet
Download the complete datasheet for Rochester Electronics FDG311N to view detailed technical specifications.
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