The FDG6318PZ is a N-Channel MOSFET with a continuous drain current rating of 500mA and a drain to source voltage of 20V. It has a drain to source resistance of 780 milliohms and a power dissipation of 300 milliwatts. The device is lead free and packaged on tape and reel. The input capacitance is 85.4 picofarads. The device is rated for a DC voltage of -20V.
Current Rating-500mA
Power300mW
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Technical Specifications
Rochester Electronics FDG6318PZ technical specifications.
General
| Continuous Drain Current (ID) | 500mA |
| Current Rating | -500mA |
| Drain to Source Resistance | 780mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 85.4pF |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 300mW |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDG6318PZ Datasheet
Download the complete datasheet for Rochester Electronics FDG6318PZ to view detailed technical specifications.
No datasheet is available for this part.