The FDI2532 is a power MOSFET with a continuous drain current rating of 79A and a maximum drain to source breakdown voltage of 150V. It features a low drain to source resistance of 16mR and a power dissipation of 310W. The device is packaged in a TO-262 package and is lead free. It is suitable for high current applications and can operate within a range of temperatures.
PackageTO-262
Current Rating79A
Power310W
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Technical Specifications
Rochester Electronics FDI2532 technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 79A |
| Current Rating | 79A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 150V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.87nF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 310W |
| DC Rated Voltage | 150V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDI2532 Datasheet
Download the complete datasheet for Rochester Electronics FDI2532 to view detailed technical specifications.
No datasheet is available for this part.