The FDN335N is a 20V N-channel power MOSFET with a continuous drain current rating of 1.7A and a power dissipation of 500mW. It features a drain to source breakdown voltage of -60V and a drain to source resistance of 70mR. The device is packaged in bulk and is compliant with lead-free requirements. It is also Reach SVHC compliant.
Current Rating1.7A
Power500mW
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Technical Specifications
Rochester Electronics FDN335N technical specifications.
General
| Continuous Drain Current (ID) | 1.7A |
| Current Rating | 1.7A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 40pF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 500mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDN335N Datasheet
Download the complete datasheet for Rochester Electronics FDN335N to view detailed technical specifications.
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