The FDPF16N50 is a power MOSFET with a continuous drain current rating of 16A and a drain to source breakdown voltage of 500V. It has a drain to source resistance of 380 milliohms and a gate to source voltage rating of 30V. The device is packaged in a lead-free rail or tube format and is compliant with RoHS regulations. The FDPF16N50 has an input capacitance of 1.94 nanofarads and a power dissipation rating of 38.5 watts. It is also compliant with Reach SVHC regulations.
Power38.5W
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Technical Specifications
Rochester Electronics FDPF16N50 technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.94nF |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Power Dissipation | 38.5W |
| Reach SVHC Compliant | Yes |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDPF16N50 Datasheet
Download the complete datasheet for Rochester Electronics FDPF16N50 to view detailed technical specifications.
No datasheet is available for this part.