The FDS3580 is a power MOSFET with a drain to source breakdown voltage of 80V and a continuous drain current of 7.6A. It has a power dissipation of 2.5W and is packaged in a lead-free SOIC package. The device is rated for operation over a wide temperature range and meets lead-free requirements.
PackageSOIC
Current Rating7.6A
Power2.5W
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Technical Specifications
Rochester Electronics FDS3580 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.6A |
| Current Rating | 7.6A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 80V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 2.5W |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDS3580 Datasheet
Download the complete datasheet for Rochester Electronics FDS3580 to view detailed technical specifications.
No datasheet is available for this part.