The FDS4435BZ is a 30V N-Channel MOSFET with a continuous drain current of -8.8A and a drain to source resistance of 16mR. It has a power dissipation of 2.5W and is packaged in a lead-free SOIC package. The device is compliant with Reach SVHC regulations and is available in tape and reel packaging.
PackageSOIC
Current Rating-8.8A
Power2.5W
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Technical Specifications
Rochester Electronics FDS4435BZ technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -8.8A |
| Current Rating | -8.8A |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | -30V |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.36nF |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDS4435BZ Datasheet
Download the complete datasheet for Rochester Electronics FDS4435BZ to view detailed technical specifications.
No datasheet is available for this part.
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