The FDS6673BZ is a field-effect transistor with a maximum continuous drain current of 14.5mA and a maximum drain to source voltage of 30V. It has a drain to source resistance of 6.5mR and a gate to source voltage of 25V. The device is packaged in a SO package and is lead free. It is compliant with Reach SVHC regulations and is available in tape and reel packaging.
PackageSO
Power2.5W
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Technical Specifications
Rochester Electronics FDS6673BZ technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 14.5mA |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 25V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | Yes |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDS6673BZ Datasheet
Download the complete datasheet for Rochester Electronics FDS6673BZ to view detailed technical specifications.
No datasheet is available for this part.