The FDS6675BZ is a 30V drain to source voltage FET with a gate to source voltage of 25V and a continuous drain current of 11mA. It has a drain to source resistance of 10.8 milliohms and a power dissipation of 2.5 watts. The device is packaged in a lead free SO package and is available on cut tape. It meets the requirements for Reach SVHC compliance.
PackageSO
Power2.5W
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Technical Specifications
Rochester Electronics FDS6675BZ technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 11mA |
| Drain to Source Resistance | 10.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 25V |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | Yes |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDS6675BZ Datasheet
Download the complete datasheet for Rochester Electronics FDS6675BZ to view detailed technical specifications.
No datasheet is available for this part.