The FDS6679 is a N-channel power MOSFET with a continuous drain current rating of 13A and a drain to source breakdown voltage of 20V. It is packaged in a SOIC package and has a power dissipation of 2.5W. The device is lead free and compliant with Reach SVHC. The FDS6679 can handle a DC rated voltage of -30V and has an input capacitance of 3.94nF. It is suitable for use in high current applications.
PackageSOIC
Current Rating-13A
Power2.5W
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Technical Specifications
Rochester Electronics FDS6679 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13A |
| Current Rating | -13A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | -30V |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 3.94nF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDS6679 Datasheet
Download the complete datasheet for Rochester Electronics FDS6679 to view detailed technical specifications.
No datasheet is available for this part.