The FDS6894AZ is a power MOSFET from Rochester Electronics with a continuous drain current of 8A and a drain to source breakdown voltage of 20V. It is packaged in a lead-free SOIC package and has a power dissipation of 2W. The device is rated for operation at a DC voltage of 20V and has an input capacitance of 1.46nF. It is suitable for use in a variety of applications requiring high current and low resistance.
Rochester Electronics FDS6894AZ technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.46nF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 2W |
| DC Rated Voltage | 20V |
| RoHS | Not Compliant |
Download the complete datasheet for Rochester Electronics FDS6894AZ to view detailed technical specifications.
No datasheet is available for this part.