The FDS8960C is a power MOSFET from Rochester Electronics with a continuous drain current rating of 7A and a drain to source breakdown voltage of 35V. It is packaged in a SOIC package and is lead free. The device is rated for a power dissipation of 2W and is compliant with Reach SVHC regulations. The input capacitance is 540pF and the drain to source resistance is 530mR.
PackageSOIC
Current Rating7A
Power2W
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Technical Specifications
Rochester Electronics FDS8960C technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Breakdown Voltage | 35V |
| Drain to Source Resistance | 530mR |
| Drain to Source Voltage (Vdss) | 35V |
| Input Capacitance | 540pF |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Power Dissipation | 2W |
| Reach SVHC Compliant | Yes |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDS8960C Datasheet
Download the complete datasheet for Rochester Electronics FDS8960C to view detailed technical specifications.
No datasheet is available for this part.