The FDT457N is a 30V 5A N-Channel Power MOSFET packaged in a SOT-223 case. It features a continuous drain current of 5A and a power dissipation of 3W. The device is lead free and compliant with Reach SVHC regulations. It has an input capacitance of 235pF and a drain to source breakdown voltage of 30V.
PackageSOT-223
Current Rating5A
Power3W
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Technical Specifications
Rochester Electronics FDT457N technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 235pF |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Power Dissipation | 3W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDT457N Datasheet
Download the complete datasheet for Rochester Electronics FDT457N to view detailed technical specifications.
No datasheet is available for this part.