The FQB2P25TM is a power MOSFET with a continuous drain current rating of 2.3A and a drain to source voltage rating of 250V. It features a drain to source resistance of 3.15 ohms and a power dissipation of 3.13W. The device is packaged in a TO-263 case and is lead free. It is rated for operation over a wide temperature range.
PackageTO-263
Resistance4R
Current Rating-2.3A
Power3.13W
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Technical Specifications
Rochester Electronics FQB2P25TM technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 2.3A |
| Current Rating | -2.3A |
| Drain to Source Resistance | 3.15R |
| Drain to Source Voltage (Vdss) | 250V |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 3.13W |
| Resistance | 4R |
| DC Rated Voltage | -250V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FQB2P25TM Datasheet
Download the complete datasheet for Rochester Electronics FQB2P25TM to view detailed technical specifications.
No datasheet is available for this part.