Rochester Electronics
FQD12N20LTM
N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 9.0 A, 280 mO, DPAK
PackageTO-252
Current Rating9A
Power2.5W
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Technical Specifications
Rochester Electronics FQD12N20LTM technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FQD12N20LTM Datasheet
Download the complete datasheet for Rochester Electronics FQD12N20LTM to view detailed technical specifications.
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