The FQD6N40CTM is a N-Channel MOSFET with a drain to source breakdown voltage of 400V and a continuous drain current of 4.5A. It has a power dissipation of 2.5W and is packaged in a TO-252 case. The device is lead free and compliant with Reach SVHC regulations. It is available in tape and reel packaging.
PackageTO-252
Current Rating4.5A
Power2.5W
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Technical Specifications
Rochester Electronics FQD6N40CTM technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 400V |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FQD6N40CTM Datasheet
Download the complete datasheet for Rochester Electronics FQD6N40CTM to view detailed technical specifications.
No datasheet is available for this part.