The FQP10N20C is a 200V power MOSFET with a continuous drain current of 9.5A. It features a TO-220 package and is packaged in bulk. The device has a drain to source breakdown voltage of 200V and a drain to source resistance of 360 milliohms. The FQP10N20C is lead free and has a power dissipation of 72W. It is suitable for a variety of applications including power supplies and motor control.
Rochester Electronics FQP10N20C technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 9.5A |
| Current Rating | 9.5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 360mR |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 72W |
| DC Rated Voltage | 200V |
| RoHS | Not Compliant |
Download the complete datasheet for Rochester Electronics FQP10N20C to view detailed technical specifications.
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