The FQP7N80C is a 800V 6.6A power MOSFET packaged in a TO-220 case. It has a maximum power dissipation of 167W and a DC rated voltage of 800V. The device is lead free and compliant with Reach SVHC regulations. The FQP7N80C has a drain to source breakdown voltage of 800V and a gate to source voltage of 30V. It can handle a continuous drain current of 6.6A and has a drain to source resistance of 1.9 ohms.
PackageTO-220
Current Rating6.6A
Power167W
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Technical Specifications
Rochester Electronics FQP7N80C technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 6.6A |
| Current Rating | 6.6A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.9R |
| Drain to Source Voltage (Vdss) | 800V |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Power Dissipation | 167W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FQP7N80C Datasheet
Download the complete datasheet for Rochester Electronics FQP7N80C to view detailed technical specifications.
No datasheet is available for this part.