The FQPF11N40C is a N-Channel FET with a continuous drain current rating of 10.5A and a drain to source breakdown voltage of 400V. It has a drain to source resistance of 430 milliohms and a power dissipation of 44W. The device is packaged in a lead-free configuration and supplied on tape and reel. The FQPF11N40C is suitable for use in high-power applications where a robust FET is required. Operating temperature range is not specified.
Current Rating10.5A
Power44W
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Technical Specifications
Rochester Electronics FQPF11N40C technical specifications.
General
| Continuous Drain Current (ID) | 10.5A |
| Current Rating | 10.5A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 430mR |
| Drain to Source Voltage (Vdss) | 400V |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 44W |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FQPF11N40C Datasheet
Download the complete datasheet for Rochester Electronics FQPF11N40C to view detailed technical specifications.
No datasheet is available for this part.