Rochester Electronics
FQPF11N50CF
Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 11 A, 550 mΩ, TO-220F
Power48W
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Technical Specifications
Rochester Electronics FQPF11N50CF technical specifications.
General
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 550mR |
| Packaging | Rail/Tube |
| Power Dissipation | 48W |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FQPF11N50CF Datasheet
Download the complete datasheet for Rochester Electronics FQPF11N50CF to view detailed technical specifications.
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