The FQPF6N80T is a 800V N-Channel Power MOSFET with a continuous drain current rating of 3.3A. It features a drain to source breakdown voltage of 800V and a drain to source resistance of 1.95 ohms. The device is lead free and packaged in tape and reel format. It has a power dissipation rating of 51W and is suitable for high voltage applications.
Current Rating3.3A
Power51W
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Technical Specifications
Rochester Electronics FQPF6N80T technical specifications.
General
| Continuous Drain Current (ID) | 3.3A |
| Current Rating | 3.3A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.95R |
| Drain to Source Voltage (Vdss) | 800V |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 51W |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FQPF6N80T Datasheet
Download the complete datasheet for Rochester Electronics FQPF6N80T to view detailed technical specifications.
No datasheet is available for this part.