The FQPF7N65C is a 650V power MOSFET with a continuous drain current of 7A. It has a drain to source breakdown voltage of 650V and a drain to source resistance of 1.4 ohms. The device is lead free and packaged in rail/tube form. It is compliant with Reach SVHC regulations. The FQPF7N65C is rated for a power dissipation of 52W.
Current Rating7A
Power52W
Quick Jump:
Technical Specifications
Rochester Electronics FQPF7N65C technical specifications.
General
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Power Dissipation | 52W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 650V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FQPF7N65C Datasheet
Download the complete datasheet for Rochester Electronics FQPF7N65C to view detailed technical specifications.
No datasheet is available for this part.