The NDB6020P is a surface mount power MOSFET with a continuous drain current of 24A and a drain to source breakdown voltage of -20V. It has a power dissipation of 60W and is rated for lead free applications. The device is packaged in a TO-263 case and is suitable for use in a variety of electronic applications.
PackageTO-263
Current Rating-24A
MountingSurface Mount
Power60W
Quick Jump:
Technical Specifications
Rochester Electronics NDB6020P technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 24A |
| Current Rating | -24A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 41mR |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Power Dissipation | 60W |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics NDB6020P Datasheet
Download the complete datasheet for Rochester Electronics NDB6020P to view detailed technical specifications.
No datasheet is available for this part.