N-Channel Enhancement Mode Field Effect Transistor 30V, 7.2A, 35mΩ
Rochester Electronics NDT451AN technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 7.2A |
| Current Rating | 7.1A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Packaging | Bulk |
| Power Dissipation | 3W |
| DC Rated Voltage | 30V |
| RoHS | Not Compliant |
Download the complete datasheet for Rochester Electronics NDT451AN to view detailed technical specifications.
No datasheet is available for this part.