The NID6002NT4G is a power MOSFET with a drain to source breakdown voltage of 70V and a continuous drain current of 11A. It has a power dissipation of 2.5W and is compliant with lead-free requirements. The device is packaged in cut tape form and is Reach SVHC compliant. It can operate with a DC rated voltage of up to 65V.
Current Rating6.5A
Power2.5W
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Technical Specifications
Rochester Electronics NID6002NT4G technical specifications.
General
| Continuous Drain Current (ID) | 11A |
| Current Rating | 6.5A |
| Drain to Source Breakdown Voltage | 70V |
| Drain to Source Resistance | 210mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 14V |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 65V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics NID6002NT4G Datasheet
Download the complete datasheet for Rochester Electronics NID6002NT4G to view detailed technical specifications.
No datasheet is available for this part.