Search Results for "2N3014"

Power Bipolar Transistor, 4A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, METAL CAN, TO-66, 2 PIN

NPN BJT Transistor, 60V, 15A, 115W, 3MHz, TO-3

Silicon Controlled Rectifier, 0.8A I(T)RMS, 250mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-18

Silicon Controlled Rectifier, 0.8A I(T)RMS, 250mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-18

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

Small Signal Bipolar Transistor, 0.7A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39

Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

Silicon Controlled Rectifier

NPN BJT TO-3 60V 15A Power Transistor

Silicon Controlled Rectifier, 0.8A I(T)RMS, 250mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-18,

Silicon Controlled Rectifier, 0.8A I(T)RMS, 250mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-18

0.35A, 30V, SCR, TO-18

Silicon Controlled Rectifier, 0.8A I(T)RMS, 250mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-18

15A, 100V, NPN, Si, POWER TRANSISTOR, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN

Transistor

MULTICOMP 2N3055 Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 800 kHz, 115 W, 15 A, 5

Transistor Polarity:NPN

Silicon Controlled Rectifier, 0.785A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-18

Silicon Controlled Rectifier, 0.8A I(T)RMS, 250mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-18

Silicon Controlled Rectifier, 0.8A I(T)RMS, 250mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-18