Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-4
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Silicon Controlled Rectifier, 15.7A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element
Silicon Controlled Rectifier, 23.55A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element