Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, PACKAGE-8
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, PACKAGE-8
Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, PACKAGE-8
Inductor RF Molded/Unshielded Wirewound 3.6uH 1% 7.9MHz 33Q-Factor Phenolic 325mA 2.15Ohm DCR AXL T/R
Inductor RF Molded/Unshielded Wirewound 3.9uH 1% 7.9MHz 45Q-Factor Iron 263mA 1Ohm DCR AXL T/R
Inductor RF Molded/Unshielded Wirewound 27uH 1% 2.5MHz 60Q-Factor Iron 330mA 1.3Ohm DCR AXL T/R
Inductor RF Molded/Unshielded Wirewound 8.2uH 1% 7.9MHz 50Q-Factor Iron 410mA 600mOhm DCR AXL T/R
Inductor RF Molded/Unshielded Wirewound 620uH 1% 790KHz 60Q-Factor Iron 120mA 12.5Ohm DCR AXL T/R
Inductor RF Molded/Unshielded Wirewound 15uH 1% 2.5MHz 55Q-Factor Iron 324mA 1.2Ohm DCR AXL T/R
Inductor RF Molded/Unshielded Wirewound 2.7uH 1% 7.9MHz 45Q-Factor Iron 236mA 850mOhm DCR AXL T/R
Inductor RF Unshielded Wirewound 2.7uH 1% 7.9MHz 30Q-Factor Iron 0.229A 0.9Ohm DCR 2510 T/R
Power Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, PACKAGE-8
Inductor RF Unshielded Wirewound 3.9uH 1% 7.9MHz 45Q-Factor Iron 0.263A 1Ohm DCR 3013 T/R
Inductor RF Molded/Unshielded Wirewound 3.6uH 1% 7.9MHz 33Q-Factor Phenolic 325mA 2.15Ohm DCR AXL T/R
Inductor RF Molded/Unshielded Wirewound 560uH 1% 790KHz 75Q-Factor Iron 165mA 18.5Ohm DCR AXL T/R