SENSOR THROUGH-BEAM 30M PNP
Photoelectric Sensors Country of Origin Change Only
SMD Shielded Wire-Wound Chip Inductor
LED flush mounted fixture Dimensions W x H: x 46 mm Dimensions ø x H: 111 x 46 mm Operating temperature: -40 ... 40...
DRAM Module DDR SDRAM 1Gbyte 200SODIMM
Crucial 1 GB Laptop Computer Memory Module, 400MHz, DDR SODIMM
Solid State Drive 2.5in SATA 128Gbyte 6Gbps 4000Mbps 1400Mbps 1200000h
Photoelectric Sensor, Thru-Beam, NPN, 1m, 12-24VDC
Photoelectric Sensor, Through-Beam, NPN, 1ms, 0.5m
Ind Chip Wirewound 22uH 10% 2.52MHz 15 520mA T/R
Ind Chip Wirewound 2.2uH 5% 7.96MHz 20 1.5A T/R
Ind Chip Wirewound 470nH 5% 25.2MHz 40 300mA T/R
SMD Ceramic Core Wire-Wound Chip Inductor
Ind Chip Wirewound 470nH 10% 25.2MHz 40 300mA T/R
Ind Chip Wirewound 1uH 5% 7.96MHz 20 300mA T/R
Ind Chip Wirewound 27uH 10% 2.52MHz 15 480mA T/R
