Power Field-Effect Transistor, 180A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Inductor RF Chip Molded Wirewound 100uH 10% 796KHz 40Q-Factor 0.11A 8Ohm DCR 1812 T/R
Inductor RF Chip Molded Wirewound 18uH 10% 2.52MHz 50Q-Factor 0.19A 2.8Ohm DCR 1812 T/R
Inductor RF Chip Molded Wirewound 18uH 5% 2.52MHz 50Q-Factor 0.19A 2.8Ohm DCR 1812 T/R
Inductor RF Chip Molded Wirewound 1.5uH 10% 7.96MHz 50Q-Factor 0.41A 0.6Ohm DCR 1812 T/R