Search Results for "FB15ANEP4-FA"

Bridge Rectifier Diode, 1 Phase, 15A, 200V V(RRM), Silicon, PLASTIC PACKAGE-4

Bridge Rectifier Diode, 1 Phase, 15A, 100V V(RRM), Silicon, PLASTIC PACKAGE-4

Bridge Rectifier Diode, 1 Phase, 15A, 50V V(RRM), Silicon, PLASTIC PACKAGE-4

Bridge Rectifier Diode, 1 Phase, 15A, 1000V V(RRM), Silicon, PLASTIC PACKAGE-4

Bridge Rectifier Diode, 1 Phase, 15A, 1000V V(RRM), Silicon, PLASTIC PACKAGE-4

Bridge Rectifier Diode, 1 Phase, 15A, 50V V(RRM), Silicon, PLASTIC PACKAGE-4

Bridge Rectifier Diode, 1 Phase, 15A, 200V V(RRM), Silicon, PLASTIC PACKAGE-4

Bridge Rectifier Diode, 1 Phase, 15A, 600V V(RRM), Silicon, PLASTIC PACKAGE-4

Bridge Rectifier Diode, 1 Phase, 15A, 800V V(RRM), Silicon, PLASTIC PACKAGE-4

150uH 5% Wirewound Inductor, 1812 SMD, Ferrite, 95mA

15uH 215mA 1812 SMD Ferrite Wirewound Inductor

Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, MODULE-23

Inductor RF Chip Molded Wirewound 15uH 5% 2.52MHz 50Q-Factor 0.2A 2.5Ohm DCR 1812 T/R

Inductor RF Chip Molded Wirewound 150uH 10% 796KHz 40Q-Factor 0.105A 9Ohm DCR 1812 T/R

IGBT Modules IGBT-MODULE

Inductor RF Chip Molded Wirewound 150uH 5% 796KHz 40Q-Factor 0.105A 9Ohm DCR 1812 T/R

Inductor RF Chip Molded Wirewound 15uH 10% 2.52MHz 50Q-Factor 0.2A 2.5Ohm DCR 1812 T/R

Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, MODULE-26

Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, MODULE-26

Trans IGBT Module N-CH 600V 24A 19-Pin EASY1B