Inductor Power Shielded Wirewound 8.7uH 20% 10KHz 2.2A 0.034Ohm DCR T/R
Inductor Power Shielded Wirewound 12uH 20% 10KHz 1.7A 0.053Ohm DCR T/R
Inductor Power Shielded Wirewound 18uH 20% 10KHz 1.5A 0.092Ohm DCR T/R
Inductor Power Shielded Wirewound 33uH 20% 10KHz 1.1A 0.124Ohm DCR T/R
Inductor Power Shielded Wirewound 56uH 20% 10KHz 0.85A 0.202Ohm DCR T/R
Inductor Power Shielded Wirewound 39uH 20% 10KHz 1A 0.138Ohm DCR T/R
Inductor Power Shielded Wirewound 68uH 20% 10KHz 0.75A 0.234Ohm DCR T/R
Inductor Power Shielded Wirewound 10uH 20% 10KHz 2A 0.038Ohm DCR T/R
Inductor Power Shielded Wirewound 6.2uH 20% 10KHz 2.5A 0.027Ohm DCR T/R
Inductor Power Shielded Wirewound 15uH 20% 10KHz 1.6A 0.057Ohm DCR T/R
Inductor Power Shielded Wirewound 5uH 20% 10KHz 2.9A 0.024Ohm DCR T/R
ROHDE & SCHWARZ HM6050-2D STABILISER, LINE Z, GERMAN VERSION
DRIVE, 2.5" SATAII 640GB, SAMSUNG
Ind Chip Shielded 2.2uH 20% 100KHz 1.2A T/R
Ind Chip Shielded 10uH 20% 100KHz 1A T/R
Ind Chip Shielded 12uH 20% 10KHz 560mA T/R
Ind Chip Shielded 3.3uH 20% 10KHz 1.57A T/R
Ind Unshielded 47uH 20% 100KHz 510mA T/R
Ind Unshielded 22uH 20% 100KHz 620mA T/R
Cache SRAM, 64KX1, 55ns, CMOS, PDIP22, 0.300 INCH, PLASTIC, DIP-22
