Search Results for "RFP-150-50TG"

Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

30A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

RF/Microwave Termination, 0MHz Min, 5000MHz Max, 50ohm, ROHS COMPLIANT PACKAGE-1

Flanged Termination 2-Pin T/R

FLANGED TERMINATION 60 WATTS, 50 OHM

Flanged Termination

RF Amp Single Power Amp 2.7GHz 5.25V 4-Pin(3+Tab) SOT-89 T/R

Wide Band Medium Power Amplifier, 400MHz Min, 2700MHz Max, 1 Func, GAAS, PLASTIC, SOIC-8

RF/Microwave Termination, 0MHz Min, 2000MHz Max, 50ohm, CHIP

SPDT Rotary Switch, 6A 250VAC, Quick Connect, UL/CSA

FLANGED TERMINATION 60 WATTS, 50 OHM

RF/Microwave Termination, 0MHz Min, 3000MHz Max, 50ohm

BASE-MOUNTED DC SHUNT, 50mV, 150A; Current Rating:150A; Accuracy %:0.25%; Operating Temperature Min:-; Operating Temperature Max:-; Product Range:-; Sensing Element:Copper Alloy ;RoHS Compliant: Yes

SHUNT, BASE MOUNTED, 150A, 50mV; Current Rating:150A; Accuracy %:0.25%; Operating Temperature Min:-; Operating Temperature Max:-; Product Range:-; Accuracy: 0.25%; Sensing Element:Copper Alloy; Voltage Rating:50mV ;RoHS Compliant: NA

SHUNT; Current Rating:150A; Accuracy %:0.25%; Operating Temperature Min:-20 C; Operating Temperature Max:60 C; Product Range:-; Accuracy: 0.25%; Sensing Element:Copper Alloy; Shunt Voltage:50mV; Supply Current:150A ;RoHS Compliant: NA