This NPN transistor is packaged in a TO-18 case and is designed for through hole mounting. It can withstand collector base voltages of up to 140V and collector emitter voltages of up to 80V. The emitter base voltage is rated at 7V. The transistor can dissipate a maximum power of 500mW and operates within a temperature range of -65°C to 200°C.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power500mW
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Technical Specifications
Semicoa JANTXV2N3700 technical specifications.
General
| Package/Case | TO-18 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Voltage (VCEO) | 80V |
| Emitter Base Voltage (VEBO) | 7V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Semicoa JANTXV2N3700 Datasheet
Download the complete datasheet for Semicoa JANTXV2N3700 to view detailed technical specifications.
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