
The 2N3810 is a PNP transistor with a collector-emitter breakdown voltage of -60V and a collector-emitter voltage of 60V. It has a maximum power dissipation of 600mW and operates over a temperature range of -65°C to 200°C. The transistor is packaged in a TO-78 case, suitable for through-hole mounting.
Solid State 2N3810 technical specifications.
| Package/Case | TO-78 |
| Collector Emitter Breakdown Voltage | -60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 600mW |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| Transition Frequency | 100Hz |
| RoHS | Compliant |
Download the complete datasheet for Solid State 2N3810 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
