Solid State
MJ10016
SOLID STATE MJ10016 Bipolar (BJT) Single Transistor, Darlington, NPN, 500 V, 250 W, 50 A, 10 hFE
PackageTO-3
PolarityNPN
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Technical Specifications
Solid State MJ10016 technical specifications.
General
| Package/Case | TO-3 |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Voltage (VCEO) | 500V |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 250W |
| Polarity | NPN |
| Reach SVHC Compliant | No |
Compliance
| RoHS | Compliant |
Datasheet
Solid State MJ10016 Datasheet
Download the complete datasheet for Solid State MJ10016 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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