Taiwan Semiconductor TSM1N45CTB0 technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Breakdown Voltage | 450V |
| Drain to Source Resistance | 4.25R |
| Fall Time | 23.7ns |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| RoHS Compliant | Yes |
| RoHS | Not Compliant |
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