PackageSOP
PolarityN-CHANNEL
Power900mW
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Technical Specifications
Taiwan Semiconductor TSM1N45DCSRL technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Breakdown Voltage | 450V |
| Drain to Source Resistance | 4.25R |
| Polarity | N-CHANNEL |
| Power Dissipation | 900mW |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor TSM1N45DCSRL Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM1N45DCSRL to view detailed technical specifications.
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