PackageTO-92
PolarityN-CHANNEL
Power3W
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Technical Specifications
Taiwan Semiconductor TSM1N60SCT technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 13R |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2000 |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor TSM1N60SCT Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM1N60SCT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.