PackageTO-252
PolarityN-CHANNEL
Power45W
Quick Jump:
Technical Specifications
Taiwan Semiconductor TSM4ND50CPRO technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.7R |
| Fall Time | 4.5s |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor TSM4ND50CPRO Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM4ND50CPRO to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.