This single-channel low-side MOSFET gate driver is designed for split-supply operation and provides 3-A peak source current with more than 7-A peak sink current. It operates from a 3.5-V to 14-V supply range and includes undervoltage lockout protection with a typical 3-V rising threshold. Typical propagation delay is 25 ns, with 14-ns rise time and 12-ns fall time measured with a 2-nF load. The device supports both inverting and non-inverting inputs and is specified for operation from -40°C to 125°C junction temperature. The LM5112 family is offered in compact WSON and thermally enhanced MSOP PowerPAD package options, and the M package variant corresponds to the 8-pin thermally enhanced MSOP PowerPAD style on TI's product page.
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| Supply voltage | 3.5 to 14V |
| Undervoltage lockout threshold | 3 typV |
| Undervoltage lockout hysteresis | 230 typmV |
| Supply current | 1 typmA |
| Logic high input threshold | 2.3 minV |
| Logic low input threshold | 0.8 maxV |
| Input hysteresis | 400 typmV |
| Peak source current | 3 typA |
| Peak sink current | 7 typA |
| Propagation delay low-to-high | 25 typns |
| Propagation delay high-to-low | 25 typns |
| Rise time | 14 typns |
| Fall time | 12 typns |
| Operating junction temperature | -40 to 125°C |
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