The 2N6341G is a surface mount NPN transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. It has a maximum power dissipation of 150mW and is packaged in a TO-236-3 case. The transistor is lead free and is available in tape and reel packaging. It has a transition frequency of 80MHz and a DC rated voltage of 150V.
PackageTO-236-3
Current Rating25A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Toshiba 2N6341G technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 25A |
| Lead Free | Lead Free |
| Max Collector Current | 150mA |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Transition Frequency | 80MHz |
| DC Rated Voltage | 150V |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2N6341G Datasheet
Download the complete datasheet for Toshiba 2N6341G to view detailed technical specifications.
No datasheet is available for this part.