The 2SA1015-O(F,T) NPN transistor from Toshiba features a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. It has a maximum power dissipation of 400mW and a transition frequency of 80MHz. The device is packaged in a TO-226-3 package and is available in quantities of 200. The 2SA1015-O(F,T) is not RoHS compliant.
PackageTO-226-3
MountingThrough Hole
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Technical Specifications
Toshiba 2SA1015-O(F,T) technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Max Collector Current | 150mA |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Package Quantity | 200 |
| Packaging | Rail/Tube |
| RoHS Compliant | No |
| Transition Frequency | 80MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Toshiba 2SA1015-O(F,T) Datasheet
Download the complete datasheet for Toshiba 2SA1015-O(F,T) to view detailed technical specifications.
No datasheet is available for this part.