The Toshiba 2SA1145-O transistor is a PNP device with a maximum collector-emitter voltage of 150V and a maximum collector current of 50mA. It features a gain bandwidth product of 200MHz and a minimum current gain of 80. The transistor is packaged in a TO-226-3 case and is designed for through-hole mounting. It can operate at a maximum temperature of 150°C and has a maximum power dissipation of 800mW.
PackageTO-226-3
MountingThrough Hole
PolarityPNP
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Technical Specifications
Toshiba 2SA1145-O(TE6,F,M) technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | -150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -1V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 80 |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Transition Frequency | 200MHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SA1145-O(TE6,F,M) Datasheet
Download the complete datasheet for Toshiba 2SA1145-O(TE6,F,M) to view detailed technical specifications.
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