NPN Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-3PL package. Features a maximum collector-emitter voltage of 750V, maximum collector current of 18A, and a maximum power dissipation of 200,000mW. This single-element silicon transistor offers a minimum DC current gain of 22 at 2A, 9 at 7A, and 5 at 14A, all at 5V. Maximum operating temperature reaches 150°C.
PackageTO-3PL
MountingThrough Hole
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Technical Specifications
Toshiba 2SC5589(Q) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-3P |
| Package/Case | TO-3PL |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 20 |
| Package Width (mm) | 5 |
| Package Height (mm) | 26 |
| Seated Plane Height (mm) | 28.5 |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 1500V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 750V |
| Maximum DC Collector Current | 18A |
| Maximum Power Dissipation | 200000mW |
| Material | Si |
| Minimum DC Current Gain | 22@2A@5V|9@7A@5V|5@14A@5V |
| Maximum Transition Frequency | 2(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SC5589(Q) Datasheet
Download the complete datasheet for Toshiba 2SC5589(Q) to view detailed technical specifications.
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