NPN Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-3PL package. Features a maximum collector-emitter voltage of 750V, maximum collector current of 18A, and a maximum power dissipation of 200,000mW. This single-element silicon transistor offers a minimum DC current gain of 22 at 2A, 9 at 7A, and 5 at 14A, all at 5V. Maximum operating temperature reaches 150°C.
PackageTO-3PL
MountingThrough Hole
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Technical Specifications
Toshiba 2SC5589(Q) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-3P
Package/Case
TO-3PL
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
20
Package Width (mm)
5
Package Height (mm)
26
Seated Plane Height (mm)
28.5
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
1500V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
750V
Maximum DC Collector Current
18A
Maximum Power Dissipation
200000mW
Material
Si
Minimum DC Current Gain
22@2A@5V|9@7A@5V|5@14A@5V
Maximum Transition Frequency
2(Typ)MHz
Category
Bipolar Power
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC5589(Q) Datasheet
Download the complete datasheet for Toshiba 2SC5589(Q) to view detailed technical specifications.
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